Electronic device, assembly and methods of manufacturing an electronic device including a vertical trench capacitor and a vertical interconnect
US9530857B2 · kind B2 · utility
8Cited by
18References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2004 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Mar 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate comprises both vertical interconnects and vertical capacitors with a common dielectric layer. The substrate can be suitably combined with further devices to form an assembly. The substrate can be made in etching treatments including a first step on the one side, and then a second step on the other side of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.