High-voltage vertical power component
US9530875B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Jan 7, 2016 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Jan 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at a component periphery with an insulating porous silicon ring. An upper surface of the porous silicon ring is only in contact with the substrate of the first conductivity type. The insulating porous silicon ring penetrates into the substrate down to a depth greater than a thickness of the well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.