Nitride semiconductor light-emitting device and method for producing the same
US9530932B2 · kind B2 · utility
1Cited by
10References
5Claims
0Family size
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Key dates
| Filing date | May 26, 2015 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | May 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/036
Abstract
A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.