Method for depositing layers on a glass substrate by means of low-pressure PECVD
US9533914B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2012 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Sep 15, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/153
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The invention relates to a method for producing metal or semiconductor oxide, nitride or oxynitride films on a substrate, by means of the PECVD method, including the steps that involve: (i) having a low-pressure PECVD device including at least one plasma source that includes at least one electrode connected to an AC, DC, or drawn DC generator for depositing said films on the substrate; and (ii) applying electrical power to the plasma source and applying, on the substrate, an oxide film gas precursor made of metal or semiconductor nitrides or oxynitrides and a reactive gas made of oxygen, oxygen derivatives, or nitrogen derivatives. The invention also relates to metal or semiconductor oxide, nitride, or oxynitride films obtained by the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.