Defect sampling for electron beam review based on defect attributes from optical inspection and optical review
US9535010B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2015 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | May 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24592
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Various embodiments for generating a defect sample for electron beam review are provided. One method includes combining, on a defect-by-defect basis, one or more first attributes for defects determined by optical inspection of a wafer on which the defects were detected with one or more second attributes for the defects determined by optical review of the wafer thereby generating combined attributes for the defects. The method also includes separating the defects into bins based on the combined attributes for the defects. The bins correspond to different defect classifications. In addition, the method includes sampling one or more of the defects for the electron beam review based on the bins into which the defects have been separated thereby generating a defect review sample for the electron beam review.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.