Patent · US Active

Semiconductor structures

US9536827B1 · kind B1 · utility

6Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 26, 2016
Grant dateJan 3, 2017
Priority date
Expiry dateFeb 26, 2036

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C8/14
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

The present disclosure relates to a semiconductor structure which includes a first row of diffusion strap having two sections separated by a first distance, a second row of diffusion strap having two sections separated by the first distance, a third row of diffusion strap having two sections separated by the first distance, a fourth row of diffusion strap having two sections separated by the first distance, a first row of conductive strap over the first row of diffusion strap and the second row of diffusion strap, and a second row of conductive strap over the third row of diffusion strap and the fourth row of diffusion strap. The first row of conductive strap has two sections separated by a second distance. The second row of conductive strap has having two sections separated by the second distance, wherein the second distance is greater than the first distance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.