CMOS compatible resonant interband tunneling cell
US9536886B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 17, 2016 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Feb 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
A semiconductor device includes a first diode connected transistor of a first conductivity type and a second diode connected transistor of a second conductivity type connected in series, each of the first and second diode connected transistors being configured to exhibit negative differential resistance in response to an applied voltage. The first drain and first source regions of the first diode connected transistor include dopants of the first conductivity type at degenerate dopant concentration levels and a gate of the first diode connected transistor has a work function that corresponds to that of the semiconductor containing dopants of the second conductivity type. The second drain and second source regions of the second diode connected transistor include dopants of the second conductivity type at degenerate dopant concentration levels and a gate of the second diode connected transistor has a work function that corresponds to that of the semiconductor containing dopants of the first conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.