Front side illuminated semiconductor structure with improved light absorption efficiency
US9536914B2 · kind B2 · utility
4Cited by
0References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2015 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Jan 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/804
Abstract
There is provided a front side illuminated (FSI) semiconductor structure with improved light absorption efficiency which is configured to provide a reflecting layer on a bottom of the FSI semiconductor structure to enhance the light absorption efficiency, wherein the reflecting layer is manufactured in the packaging process or the semiconductor process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.