Semiconductor device and method of manufacturing same
US9536944B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2013 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Nov 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a deep layer with a higher impurity concentration than that of a super junction structure. The deep layer is formed from a position deeper from a surface of a semiconductor layer by a predetermined depth, and comes in contact with a high impurity layer and also comes in contact with the super junction structure. The deep layer overlaps with a portion between a first end which is an outermost peripheral side of a portion that comes in contact with the high impurity layer in a front surface electrode and an end on an outer peripheral side in the high impurity layer when viewed from a substrate normal direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.