P-type oxide, composition for producing p-type oxide, method for producing p-type oxide, semiconductor element, display element, image display device, and system
US9536957B2 · kind B2 · utility
3Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2012 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Nov 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.