Recessed ohmic contacts in a III-N device
US9536967B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2014 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Dec 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device includes a III-N layer having an upper side and a lower side, the lower side being opposite the upper side, and at least one conductive contact on the upper side of the III-N layer, the conductive contact extending into the III-N layer. The conductive contact comprises a top side facing away from the lower side of the III-N layer, and a bottom side facing towards the lower side of the III-N layer. The bottom side includes a first end and a second end opposite the first end, a first side rising from the first end to an intermediate point closer to the top side than the first end, and a second side falling from the intermediate point to the second end further from the top side than the intermediate point.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.