Ferroelectric devices including a layer having two or more stable configurations
US9536975B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2015 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Jun 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/033
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Ferroelectric semiconductor devices are provided by including a ferroelectric layer in the device that is made of a material that is not ferroelectric in bulk. Such layers can be disposed at interfaces to promote ferroelectric switching in a semiconductor device. Switching of conduction in the semiconductor is effected by the polarization of a mechanically bi-stable material. This material is not ferroelectric in bulk but can be considered to be when the thickness is sufficiently reduced down to a few atomic layers. Devices including such ferroelectric layers are suitable for various applications, such as transistors and memory cells (both volatile and non-volatile).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.