Pinned photodiode (PPD) pixel architecture with separate avalanche region

US9537028B2 · kind B2 · utility

Assignees

• IMEC VZW · BE
• Katholieke Universiteit Leuven, KU LEUVEN R&D · BE

Inventors

• Koen De Munck · Leuven, BE
• Tomislav Resetar · Leuven, BE

Key dates

• Filing date: Jun 19, 2014
• Grant date: Jan 3, 2017
• Expiry date: Jun 19, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

Described herein is a pinned photodiode pixel architecture having a p-type substrate that is independently biased with respect to a pixel area to provide an avalanche region between an n-type region and a p-type region formed on the substrate. Such a pinned photodiode pixel can be used in imaging sensors that are used in low light level conditions.