Patent · US Active

Inorganic light-emitting diode with encapsulating reflector

US9537069B1 · kind B1 · utility

60Cited by
73References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 30, 2015
Grant dateJan 3, 2017
Priority date
Expiry dateJun 30, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H29/142

Abstract

An inorganic light-emitting diode structure includes a transparent substrate and an inorganic semiconductor having a conduction layer and a light-emitting layer over and in contact with only a portion of the conduction layer. A first metal contact is in electrical contact with the conduction layer and a second metal contact is in electrical contact with a second contact portion of the light-emitting layer so that a current supplied between the first metal contact and the second metal contact through the inorganic semiconductor causes the light-emitting layer to emit light. A dielectric layer is located over at least a portion of the light-emitting layer and a reflective layer is located over at least a portion of the dielectric layer. The reflective layer encapsulates the light-emitting layer exclusive of the portion of the conduction layer in contact with the light-emitting layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.