Anode structure having silicon elements
US9537147B2 · kind B2 · utility
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25Claims
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Key dates
| Filing date | Dec 28, 2013 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Dec 22, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An anode structure may include a first bus bar having a first conductive coating, a second bus bar having a second conductive coating, and a plurality of silicon elements between the first bus bar and the second bus bar with a first void between a first one of the silicon elements and a second one of the silicon elements. Additionally, at least the first one of the silicon elements to expand into the first void.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.