MEMS-CMOS device that minimizes outgassing and methods of manufacture
US9540228B2 · kind B2 · utility
3Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2015 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Jun 23, 2035 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0792
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A MEMS device is disclosed. The MEMS device includes a first substrate. At least one structure is formed within the first substrate. The first substrate includes at least one first conductive pad thereon. The MEMS device also includes a second substrate. The second substrate includes a passivation layer. The passivation layer includes a plurality of layers. A top layer of the plurality of layers comprises an outgassing barrier layer. At least one second conductive pad and at least one electrode are coupled to the top layer. At least one first conductive pad is coupled to the at least one second conductive pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.