MEMS device with a bonding layer embedded in the cap
US9540231B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2014 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Apr 5, 2034 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/019
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Embodiments of a semiconductor device structure are provided. The semiconductor device structure includes a cap structure. The cap structure includes: a first bonding layer and a cap substrate, and the first bonding layer is embedded in the cap substrate. The semiconductor device structure also includes a substrate structure. The substrate structure includes a substrate and a second bonding layer formed on the substrate. The substrate includes a micro-electro-mechanical system (MEMS) substrate or a semiconductor substrate. The cap structure is bonded to the substrate structure by bonding the first bonding layer and the second bonding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.