Magnetoresistive sensor with stop-layers
US9542961B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2014 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Jun 19, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1164
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during manufacturing of reader structures to protect various layers of the reader structure from recession and/or scratches while processing other non-protected layers of the reader structure. For example, the stop layer may have a very low polish rate during mechanical or chemical-mechanical polishing. Surrounding areas may be significantly polished while a structure protected by a stop layer with a very low polish rate is substantially unaffected. The stop layer may then be removed via etching, for example, after the mechanical or chemical-mechanical polishing is completed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.