Patent · US Active

SRAM core cell design with write assist

US9542992B2 · kind B2 · utility

9Cited by
3References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 18, 2013
Grant dateJan 10, 2017
Priority date
Expiry dateSep 16, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/412
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A static random access memory (SRAM) cell includes a storage unit configured to store a data bit in a storage node. The SRAM cell further includes an access unit coupled to the storage unit. The access unit is configured to transfer current to the storage node when a word line is asserted. The SRAM cell further includes a row header configured to provide current from a power supply when the word line is not asserted, and to not provide current from the power supply when the word line is asserted. The SRAM cell further includes a column header configured to provide current from a power supply when a write column line is not asserted, and to not provide current from the power supply when the write column line is asserted.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.