Nonvolatile memory device, memory system including the same, and method of operating nonvolatile memory device
US9543032B2 · kind B2 · utility
2Cited by
11References
20Claims
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Key dates
| Filing date | Oct 20, 2014 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Oct 20, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3436
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device includes a non-volatile memory cell array including a plurality of word lines, a voltage generator configured to generate a first high-voltage using a supply voltage and a second high-voltage using an external voltage which is higher than the supply voltage, and a word line selection circuit configured. The word line selection circuit is configured apply, during a program operation of the memory cell array, the first high-voltage to a selected word line among the plurality of word lines, and the second high-voltage to unselected word lines among the plurality of word lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.