Method for producing amorphous oxide thin film and thin film transistor
US9543143B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2013 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Apr 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/028
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing an amorphous oxide thin film includes: a pre-treatment process of selectively changing a binding state of an organic component, at a temperature lower than a pyrolysis temperature of the organic component, in a first oxide precursor film containing the organic component and In, to obtain a second oxide precursor film in which, when an infrared wave number range of from 1380 cm−1 to 1520 cm−1 in an infrared absorption spectrum obtained by performing a measurement by Fourier transform infrared spectroscopy is divided into an infrared wave number range of from 1380 cm−1 to 1450 cm−1 and an infrared wave number range of from more than 1450 cm−1 to 1520 cm−1, a peak positioned within the infrared wave number range of from 1380 cm−1 to 1450 cm−1 exhibits the maximum value in the infrared absorption spectrum within an infrared wave number range of from 1350 cm−1 to 1750 cm−1; and a post-treatment process of removing the organic component remaining in the second oxide precursor film, to transform the second oxide precursor film into an amorphous oxide thin film containing In.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.