Method of fabricating semiconductor device having contact structures
US9543202B2 · kind B2 · utility
6Cited by
1References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 4, 2016 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Mar 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of fabricating a semiconductor device, the method including forming interconnection structures extending parallel to each other on a substrate; performing a coating process and forming a liquid state silicon source material layer filling an area between the interconnection structures; performing a first annealing process, curing the liquid state silicon source material layer, and forming an amorphous silicon layer; and crystallizing the amorphous silicon layer and forming contact plugs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.