Patent · US Active

Semiconductor device

US9543227B2 · kind B2 · utility

1Cited by

1References

3Claims

0Family size

Assignee

Mitsubishi Electric Corporation · JP

Inventors

Koichi Yoshimura · Yokohama, JP
Kazuhiro Kurachi · Fukuoka, JP

Key dates

Filing date	Dec 27, 2013
Grant date	Jan 10, 2017
Priority date	—
Expiry date	Dec 27, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device (10) includes a metallic base plate (22) provided with an upper surface (22a) and a lower surface (22b), a plurality of insulating substrates (24) provided on the upper surface (22a), and a plurality of semiconductor elements (26) and (28) mounted side by side on the respective insulating substrates (24). Annular grooves (50) and (52) for storing insulating grease are provided on the lower surface (22b) of the base plate (22). A surface (40a) of a cooling fin (40) is superimposed on the lower surface (22b) with insulating grease (42) interposed therebetween and insides of the annular grooves (50) and (52) are filled with the insulating grease (42).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.