Patent · US Active

Semiconductor sensor device and method of producing a semiconductor sensor device

US9543245B2 · kind B2 · utility

1Cited by

3References

9Claims

0Family size

Assignee

AMS AG · AT

Inventors

Franz Schrank · Graz, AT
Martin Schrems · Langenbruck, DE

Key dates

Filing date	Sep 23, 2013
Grant date	Jan 10, 2017
Priority date	—
Expiry date	Sep 23, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/18161
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

The semiconductor device comprises a substrate (1) of semiconductor material with a front side (4) and an opposite rear side (7), a wiring layer (5) at the front side (4), a further wiring layer (8) at the rear side (7), and a through-substrate via (3) connecting the wiring layer (5) and the further wiring layer (8). A hot plate (24) is arranged on or in the substrate, and a sensor layer (21) is arranged in the vicinity of the hot plate. A mold compound (14) is arranged on the rear side (7) above the substrate (1), a cavity (17) is formed in the mold compound (14) to accommodate the sensor layer (21), and the cavity (17) is covered with a membrane (15).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.