Semiconductor apparatus and method for producing the same
US9543252B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2012 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Jul 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plurality of semiconductor devices provided on a silicon carbide substrate are provided with electrode layers, respectively. The silicon carbide substrate is cut at a region of an exposed surface of the silicon carbide substrate that separates the electrode layers to individually separate the semiconductor devices. A stress relaxation resin is applied to each individually separated semiconductor device to cover the exposed surface at a peripheral end portion of that surface of the semiconductor device which has the electrode layer thereon. A semiconductor apparatus can thus be obtained that also allows a semiconductor device with a silicon carbide or similar compound semiconductor substrate to adhere to a sealant resin via large adhesive strength and thus allows the sealant resin to be less crackable, less peelable and the like by thermal stress caused in operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.