Patent · US Active

Integrated circuit and method for fabricating an integrated circuit equipped with a temperature probe

US9543287B2 · kind B2 · utility

0Cited by

1References

9Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

Severine Cheramy · Grenoble, FR

Key dates

Filing date	Dec 20, 2013
Grant date	Jan 10, 2017
Priority date	—
Expiry date	Feb 23, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2225/06541
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

This integrated circuit comprises: The first and second ends are entirely buried to at least 5 μm depth inside the substrate and produced, respectively, in different first and second materials chosen for the absolute value of the Seebeck coefficient of the junction to be greater than 1 μV/K at 20° C. such that the combination of these first and second conductors forms a temperature probe.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.