Reverse conducting power semiconductor device

US9543305B2 · kind B2 · utility

Assignee

• ABB Schweiz AG · CH

Inventors

• Neophythos Lophitis · Cambridge, GB
• Florin Udrea · Cambridge, GB
• Umamaheswara Vemulapati · Windisch, CH
• Lulian Nistor · Niederweningen, CH
• Martin Arnold · Cambridge, GB
• Jan Vobecky · Lenzburg, CH
• Munaf Rahimo · Uezwil, CH

Key dates

• Filing date: Mar 23, 2016
• Grant date: Jan 10, 2017
• Expiry date: Mar 23, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/148

Abstract

A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w′), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w′) of each one of the two outer cathode layer regions next to a diode cell neighboring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.