Thin film transistor substrate and method for manufacturing the same
US9543329B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2015 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Jul 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor substrate includes: a gate insulating film that covers a gate electrode and a common electrode; a transparent oxide film selectively disposed on the gate insulating film; a source electrode and a drain electrode that are spaced from each other on the transparent oxide film; and a light transmissive pixel electrode electrically connected to the drain electrode. The transparent oxide film includes a conductive region and a semiconductor region. The conductive region is disposed in a lower portion of the source electrode and the drain electrode and disposed in a portion that continues from the lower portion of the drain electrode, extends to part of an upper portion of the common electrode, and forms the pixel electrode. The semiconductor region is disposed in a portion corresponding to a lower layer in a region between the source electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.