Lateral double diffusion metal-oxide-semiconductor (LDMOS) transistors and fabrication method thereof

US9543411B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Jian Cai · Bellerose Terrace, US
• JUILIN LU · Shanghai, CN
• Ty Chiu · Shanghai, CN

Key dates

• Filing date: Oct 23, 2013
• Grant date: Jan 10, 2017
• Expiry date: Jan 23, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/126

Abstract

A lateral double diffusion metal-oxide-semiconductor (LDMOS) transistor is provided. The LDMOS transistor includes a semiconductor substrate having a well region and a drain region in the well region. The LDMOS transistor also includes at least one drifting region in the well region and an annular source region in the drifting region surrounding the drain region. Further, the LDMOS transistor includes at least one annular isolation structure surrounding the drain region in the drifting region. Further, the LDMOS transistor also includes an annular gate dielectric layer on the well region and an annular gate on the annular gate dielectric layer.