Light emitting device and method of manufacturing the same
US9543475B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2015 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Nov 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
Abstract
A light-emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits. The light-emitting device further includes a layer-quality improvement layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits with substantially same size and shape as the plurality of V-pits of the active layer, wherein layer-quality improvement layer is a group III-V semiconductor layer including Al or In. Due to the improved layer quality, the luminescent quality of the light-emitting device is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.