Patent · US Active

Vertical hall sensors with reduced offset error

US9543504B2 · kind B2 · utility

1Cited by
5References
14Claims
0Family size

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Key dates

Filing dateOct 21, 2015
Grant dateJan 10, 2017
Priority date
Expiry dateOct 21, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N52/80
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A semiconductor chip for measuring a magnetic field based on the Hall effect. The semiconductor chip comprises an electrically conductive well having a first conductivity type, in a substrate having a second conductivity type. The semiconductor chip comprises at least four well contacts arranged at the surface of the well, and having the first conductivity type. The semiconductor chip comprises a plurality of buffer regions interleaved with the well contacts and having the first conductivity type. The buffer regions are highly conductive and the buffer region dimensions are such that at least part of the current from a well contact transits through one of its neighboring buffer regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.