RRAM device

US9543511B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Fu-Ting Sung · Yangmei District, TW
• Chang-Ming Wu · New Taipei, TW
• Hsia-Wei Chen · Taipei, TW
• Shih-Chang Liu · Guanmiao, TW
• Wen-Ting Chu
• Yu-Wen Liao · New Taipei, TW

Key dates

• Filing date: Mar 12, 2015
• Grant date: Jan 10, 2017
• Expiry date: Mar 12, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

The present disclosure relates to an integrated circuits device having a RRAM cell, and an associated method of formation. In some embodiments, the integrated circuit device has a lower metal interconnect layer surrounded by a lower ILD layer and a bottom electrode disposed over the lower metal interconnect layer. The bottom electrode has a lower portion surrounded by a bottom dielectric layer and an upper portion wider than the lower portion. The bottom dielectric layer is disposed over the lower metal interconnect layer and the lower ILD layer. The integrated circuit device also has a RRAM dielectric with a variable resistance located on the bottom electrode, and a top electrode located over the RRAM dielectric. The integrated circuit device also has a top dielectric layer located over the bottom dielectric layer abutting sidewalls of the upper portion of the bottom electrode, the RRAM dielectric, and the top electrode.