Patent · US Active

Method of manufacturing mask for deposition

US9543520B1 · kind B1 · utility

0Cited by
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11Claims
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Assignee

Inventors

Key dates

Filing dateApr 12, 2016
Grant dateJan 10, 2017
Priority date
Expiry dateApr 12, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K71/166
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A manufacturing method of a mask for deposition including forming a second layer on a side of a first layer, coating a photoresist layer on a side of the second layer, forming a plurality of photoresist patterns which penetrate the photoresist layer according to an exposing and developing process, forming a plurality of pattern grooves in the second layer by etching portions of the second layer, which are exposed through the plurality of photoresist patterns, forming an electro-forming mold by removing the photoresist layer from the second layer, disposing an electrode plate to contact the second layer of the electro-forming mold, performing an electro-forming process of growing a metal layer from the electrode plate in spaces in the corresponding pattern grooves of the second layer of the electro-forming mold, to form a deposition mask, and separating the deposition mask from the electrode plate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.