Stacked active RF circuits including in-situ bias monitoring systems and methods
US9543915B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2015 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Aug 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B2001/0408
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Systems and methods according to one or more embodiments are provided for stacked active RF circuits implemented as amplification stages in high gain phased array antenna systems. Stacked active RF circuits may be implemented, for example, as an amplification stage of an element electronic circuit. Stacked active RF circuits may be implemented, for example, as a second amplification stage to maintain amplification in a high gain phased array antenna system. In one example, a system comprises a substrate comprising a plurality of substrate layers and one or more input ports and output ports. A plurality of amplification stages comprising a plurality of amplifiers, attenuators, and phase shifters are integrated within the plurality of substrate layers, the amplification stage coupled between the input and output ports. One or more monitor circuits are coupled to the plurality of amplification stages. Additional systems and methods are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.