Semiconductor device having floating body type transistor
US9543953B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 14, 2013 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Jul 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/711
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first circuit node supplied with a first signal changing between first and second logic levels, a second circuit node supplied with a second signal changing between the first and second logic levels, a third circuit node, a first transistor having a gate electrically connected to the first circuit node and a source-drain path electrically connected between the second and third circuit nodes, the first transistor being rendered conductive when the first signal is at the second logic level, a fourth circuit node supplied with a voltage level being close to or the same as the second logic level, and a second transistor having a gate electrically connected to the first circuit node and a source-drain path electrically connected between the third and fourth circuit nodes, the second transistor being rendered conductive when the first signal is at the first logic level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.