Diffusion-bonded sputter target assembly and method of manufacturing
US9546418B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2012 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Jul 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3435
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al interlayer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.