Method for forming film layer and substrate including the film layer
US9546421B2 · kind B2 · utility
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Key dates
| Filing date | Dec 16, 2013 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Jan 20, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24752
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a film layer and a substrate comprising the film layer to reduce occurrence of defects and improve the quality of the film layer are described. The method of forming a film layer comprises forming a plurality of sub-film layers of a same material overlapped with each other on a substrate by multiple steps to constitute the film layer, wherein each time a sub-film layer is formed, the newly-formed sub-film layer is cleaned immediately. The substrate comprises a film layer formed by the above method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.