Defect detection system for extreme ultraviolet lithography mask

US9546964B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Hailiang Li · Beijing, CN
• Changqing Xie · Beijing, CN
• Ming-Chang Liu · San Jose, US
• Dongmei Li · Beijing, CN
• Jiebin Niu · Beijing, CN
• Lina Shi · Beijing, CN
• Xiaoli Zhu · Beijing, CN

Key dates

• Filing date: Apr 16, 2012
• Grant date: Jan 17, 2017
• Expiry date: Jan 28, 2033

Classification

• Technology area (CPC G): Physics
• CPC primary: G02B2207/125
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A defect detection system for an extreme ultraviolet lithography mask comprises an extreme ultraviolet light source (1), extreme ultraviolet light transmission parts (2, 3), an extreme ultraviolet lithography mask (4), a photon sieve (6) and a collection (7) and analysis (8) system. Point light source beams emitted by the extreme ultraviolet light source (1) are focused on the extreme ultraviolet lithography mask (4) through the extreme ultraviolet light transmission parts (2, 3); the extreme ultraviolet lithography mask (4) emits scattered light and illuminates the photon sieve (6); and the photon sieve (6) forms a dark field image and transmits the same to the collection (7) and analysis (8) system. The defect detection system for the extreme ultraviolet photolithographic mask uses the photon sieve to replace a Schwarzchild objective, thereby realizing lower cost, relatively small size and high resolution.