Electro-optical device comprising a ridge waveguide and a PN junction and method of manufacturing said device
US9547187B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2015 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Aug 19, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/063
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electro-optic device, comprising an insulating layer and a layer light-carrying material adjacent the insulating layer. The layer of light-carrying material, such as silicon, comprises a first doped region of a first type and a second doped region of a second, different type abutting the first doped region to form a pn junction. The first doped region has a first thickness at the junction, and the second doped region has a second thickness at the junction, the first thickness being greater than the second thickness, defining a waveguide rib in the first doped region for propagating optical signals. Since the position of the junction coincides with the sidewall of the waveguide rib a self-aligned process can be used in order to simplify the fabrication process and increase yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.