Etching method of semiconductor substrate, and method of producing semiconductor device
US9548217B2 · kind B2 · utility
1Cited by
1References
20Claims
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Key dates
| Filing date | May 13, 2015 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | May 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method containing, at the time of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, selecting a substrate in which a surface oxygen content of the first layer is from 0.1 to 10% by mole, and applying an etching liquid containing a hydrofluoric acid compound and an oxidizing agent to the substrate and thereby removing the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.