Thermal surface treatment for reuse of wafers after epitaxial lift off
US9548218B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Feb 7, 2013 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Feb 7, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a method of preserving the integrity of a growth substrate in a epitaxial lift-off method, the method comprising providing a structure comprising a growth substrate, one or more protective layers, a sacrificial layer, and at least one epilayer, wherein the sacrificial layer and the one or more protective layers are positioned between the growth substrate and the at least one epilayer; releasing the at least one epilayer by etching the sacrificial layer with an etchant; and heat treating the growth substrate and/or at least one of the protective layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.