Semiconductor device and method for manufacturing the same
US9548259B2 · kind B2 · utility
2Cited by
4References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 7, 2014 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Apr 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device comprises forming a first layer on an impurity diffusion region in a semiconductor substrate by a selective epitaxial growth method, forming a second layer on the first layer by the selective epitaxial growth method, forming a contact hole penetrating an interlayer insulating film in a thickness direction thereof and reaching the second layer, and filling a conductive material into the contact hole to form a contact plug including the first and second layers and the conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.