Nonvolatile semiconductor memory device, method of manufacturing the same, and method of measuring the same
US9548315B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2015 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Sep 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device comprises: a memory cell region having a memory cell disposed therein; a peripheral region including a first stepped structure in which an end of a lower first layer is further from the memory cell region than is an end of an upper first layer; and a second stepped structure disposed on the first stepped structure, in which an end of a lower third layer is disposed further from the memory cell region than is an end of an upper third layer, a length in a second direction being shorter than a length in the second direction of the first layer or the second layer contacted by the second stepped structure, and a length in a third direction of the second stepped structure being shorter than a length in the third direction of the first layer or the second layer contacted by the second stepped structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.