Solid-state image sensor and camera
US9548328B2 · kind B2 · utility
22Cited by
20References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2015 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Nov 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
Abstract
A solid-state image sensor is provided. The sensor includes a substrate having a light-receiving surface. The substrate includes a charge accumulation portion that forms part of a photoelectric conversion element, a charge holding portion arranged at a position deeper than the charge accumulation portion from the light-receiving surface, and a first transfer portion configured to transfer charges generated by the photoelectric conversion element to the charge holding portion along a depth direction of the substrate. A distance between the charge holding portion and the light-receiving surface is not less than 4 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.