Semiconductor device with tunable work function

US9548372B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chung-Liang Cheng · Shiliujia, TW
• Wei-Jen Chen · San Diego, US
• Yen-Yu Chen · Taichung, TW
• Wei Zhang

Key dates

• Filing date: Jan 29, 2015
• Grant date: Jan 17, 2017
• Expiry date: May 10, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/60

Abstract

The metal-oxide semiconductor structure includes a substrate, a gate dielectric multi-layer, an etch stop layer, a work function metallic layer, a barrier layer and a silicide layer. The substrate has a trench. The gate dielectric multi-layer overlies the trench, in which the gate dielectric multi-layer includes a high-k capping layer with a fluorine concentration substantially in a range from 1 at % to 10 at %. The etch stop layer is disposed on the gate dielectric multi-layer. The work function metallic layer is disposed on the etch stop layer. The barrier layer is disposed on the work function metallic layer. The silicide layer is disposed on the barrier layer.