Conductive spline for metal gates
US9548384B2 · kind B2 · utility
1Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 20, 2014 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Aug 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit may include a metal gate which extends over an active area and onto an isolation dielectric layer. A conductive spline is formed on the metal gate, extending on the metal gate over at least a portion of the isolation dielectric layer, and extending on the metal gate for a length at least four times a width of the metal gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.