Thin film transistor
US9548391B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 7, 2013 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Aug 7, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a first conductive layer, a second conductive layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The first conductive layer is sandwiched between the source electrode and the semiconductor layer. The second conductive layer is sandwiched between the drain electrode and the semiconductor layer. The gate electrode is insulated from the source electrode, the drain electrode, the first conductive layer, the second conductive layer, and the semiconductor layer by the insulating layer. A first work-function of a first material of the first conductive layer and the second conductive layer is same as a second work-function of a second material of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.