Optical device based on bismuth-containing III-V compound multilayer semiconductors

US9548414B2 · kind B2 · utility

Assignee

• ARIZONA BOARD OF REGENTS FOR AND ON BEHALF OF ARIZONA STATE UNIVERSITY · US

Inventors

• Preston T. Webster · Tempe, US
• Ankur R. Sharma · Itasca, US
• Chaturvedi Gogineni · Tempe, US
• Shane R. Johnson · Chandler, US
• Nathaniel A. Riordan · Chandler, US

Key dates

• Filing date: Dec 2, 2014
• Grant date: Jan 17, 2017
• Expiry date: Dec 24, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544

Abstract

Optical devices based on bismuth-containing III-V compound semiconductor materials are disclosed. The optical device includes an optically active pseudomorphic superlattice formed on a substrate. The superlattice includes alternating InAsSby layers (where y is greater than or equal to zero) and InAsBi layers.