Light emitting diode
US9548424B2 · kind B2 · utility
2Cited by
4References
22Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 30, 2014 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Dec 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
Abstract
A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. A light extraction layer with a roughened structure is formed on the doped semiconductor layer to improve the light emitting efficiency of LED. Furthermore, the strength of the semiconductor stacked structure can be enhanced by the light extraction layer, to improve the reliability of the LED and the production yields of manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.