Semiconductor light-emitting device
US9548426B2 · kind B2 · utility
1Cited by
44References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 2015 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | May 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/851
Abstract
A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a selective transmission-reflection layer disposed on the light-emitting structure and including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once. The sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.